TGAN80N65F2DS
Previous product
HFE4001BT
€10.00
Next product
RHS100E
€695.00
€18.00
Close
Price Summary
- €18.00
- €18.00
- €18.00
Sin Stock
Highlights:
CompararTGAN80N65F2DS– IGBT + DIODO 650V 160A TO-3PN
Categorías: ELECTRONICA, SEMICONDUCTORES, TRANSISTORES
Etiqueta: TIEMPO DE ENTREGA 35 A 40 DIAS
Related Products
C3203Y (3CA)
Highlights:
TRANSISTOR NPN EPITAXIAL PLANAR 35VOLTIOS 800MA TO-92
BFG591
Highlights:
TRANSISTOR BANDA ANCHA NPN 150VOLTIOS 200MA 2WATT 7GHZ SOT-223 4PINES
BC857BS
Highlights:
TRANSISTOR DOBLE DE USO GENERAL PNP 45VOLTIOS 100MA SOT-363
G4BC10SD
Highlights:
IGBT COPACK DE 600VOLTIOS CC Y 1 KHZ (ESTÁNDAR) EN UN TO-220AB
BLF246
Highlights:
TRANSISTOR MOS DE POTENCIA VHF 108MHZ 16 DB 28VOLTIOS 13AMPERIOS SOT121B
2SK2350 (K2350)
Highlights:
TRANSISTOR DE EFECTO DE CAMPO DE SILICIO CANAL N MOS 200VOLTIOS IDP 34AMPERIOS 30WATT
GP15N120
Highlights:
TRANSDUCTOR IGBT CHIP N-CH 1200VOLTIOS 30AMPERIOS 198WATT 3-PINES TO-220
IKW15T120 (K15T120)
Highlights:
TRANSISTOR 1200VOLTIOS 30AMPERIOS 110WATT TO247-3












